Newsletter

September 2017

From the Editor’s Desk
It is our pleasure to present this issue of News letter. III-nitrides semiconductor including GaN, InN, AlN, InGaN, AlGaN and AlInGaN are promising materials, covering the spectral range from deep ultraviolet (UV) to infrared, with unique properties suitable for advanced electronic and optoelectronic applications.

March, 2017

From the Editor’s Desk
We have the pleasure of presenting this issue with the worldwide news of discovery of ‘time crystals’. Nature loves symmetry and it is fascinating to the humankind from the beginning of the civilization. From James Clerk Maxwell’s theory of electromagnetism to Einstein’s General theory of relativity, symmetry is found in the physical laws including time symmetry that never breaks.

December, 2016

From the Chairman's Desk
It gives me immense pleasure to announce the resumption of Semiconductor News, an e-newsletter of Semiconductor Society (India). The executive committee of SSI has decided to publish it out quarterly.

June, 2017

From the Editor’s Desk
We are happy to present the third issue of Semiconductor News, an e-newsletter of SSI. In the last issue, the work on vertical standing GaN nanorods based Schottky diodes was reported. GaN is a promising material for power electronics and optoelectronic devices. Recently IIT Delhi and SSI organized a workshop on growth and fabrication of GaN based electronic and optoelectronic devices where scientists from premier institutions and laboratories presented their research work. This year SSPL (DRDO) and IIT Delhi will jointly organize 19th International Workshop on Physics of Semiconductor Devices (IWPSD), which will be a golden opportunity for researchers and scientists to present their work and exchange ideas in the field of semiconductor materials and devices.