September 2018
From the Editor’s Desk
It is our pleasure to present this issue of the
SSI Newsletter. Harvesting energy from the sunlight
is considered to be one of the powerful energy source
for achieving a sustainable and renewable energy
supply. Using solar cell, light energy can be
converted directly into electricity. To date, most solar
cells are made of silicon. But, the silicon panels are
expensive to produce because of its expensive
manufacturing and installation cost. Scientists over
the world have been working to find out an
alternative way of solar cell production using
perovskite structures. A perovskite is any material
with the chemical formula ABX3, where ‘A’ and ‘B’
are two cations of different sizes and ‘X’ is an anion
that bonds to both.
June 2018
From the Editor’s Desk
Here, we present the seventh issue of Semiconductor News, an e-newsletter of SSI. In the last issue properties of Ga2O3 from device point of view had been discussed. Researchers are trying hard to grow this material for optoelectronic devices which essentially require p and n type nature of the material for device applications.
The photodetector is one of the most widely used and frequently needed optoelectronic device. The wideband optical response with excellent electronic transport properties, high quantum efficiency, low noise, large bandwidth and high speed are essentially required for photodetectors,. In current scenario, size of the device is critical feature in semiconductor industry. Scientists are putting efforts to reduce the size and weight of the photodetector and at the same time enhancing the performance levels. Shrinking the size is restricted by thin film layer quality and transparency of film towards light. Among various materials, Graphene is particularly attractive for futuristic detectors. The nearly gapless structure results into broadband absorption and high carrier mobility enables fast response. Various applications viz. infrared imaging, spectroscopy, terahertz imaging, telecommunications can be covered with the material. Quantum dot for photodetection is one of the flourishing area for innovations. Various schemes are being developed for photodetection applications such as single photon detectors.
April 2018
From the Editor’s Desk
Silicon (Si) has been extensively studied and
long being used in semiconductor technology and
devices. But in today’s scenario, Si based devices
face limitations for their application in high power
devices due to low value of critical electric field.
Recently, gallium oxide (Ga2O3) has emerged as a
key material for power devices due to its wide
bandgap (~5.0 eV) and large breakdown field (8
MV/cm). The critical field of Ga2O3 is about twenty
times more than Si and twice that of silicon carbide
(SiC) and gallium nitride (GaN). This allows Ga2O3
to be more capable than existing technologies. These
unique properties of Ga2O3 offer to operate well in
high power electronics and to fabricate solar blind
UV photodetectors, solar cells and sensors.
December 2017
From the Editor’s Desk
The air pollution is increasing day by day at
an alarming rate on global scale. According to WHO
(World Health Organization) report, more than 80%
of the world urban populations are exposed to air
quality that exceeds WHO standard levels. The air
pollution comprises of number of pollutants such as
Sulphur dioxide (SO2), Nitrogen oxides (NOx),
Ozone (O3), particulate matter (small suspended
particles of varying sizes), Carbon monoxide (CO)
and volatile organic compounds (VOCs).
September 2017
From the Editor’s Desk
It is our pleasure to present this issue of
News letter. III-nitrides semiconductor including
GaN, InN, AlN, InGaN, AlGaN and AlInGaN are
promising materials, covering the spectral range from
deep ultraviolet (UV) to infrared, with unique
properties suitable for advanced electronic and
optoelectronic applications.
June, 2017
From the Editor’s Desk
We are happy to present the third issue of
Semiconductor News, an e-newsletter of SSI. In the
last issue, the work on vertical standing GaN
nanorods based Schottky diodes was reported. GaN is
a promising material for power electronics and
optoelectronic devices. Recently IIT Delhi and SSI
organized a workshop on growth and fabrication of
GaN based electronic and optoelectronic devices
where scientists from premier institutions and
laboratories presented their research work. This year
SSPL (DRDO) and IIT Delhi will jointly organize
19th International Workshop on Physics of
Semiconductor Devices (IWPSD), which will be a
golden opportunity for researchers and scientists to
present their work and exchange ideas in the field of
semiconductor materials and devices.
March, 2017
From the Editor’s Desk
We have the pleasure of presenting this
issue with the worldwide news of discovery of ‘time
crystals’. Nature loves symmetry and it is fascinating
to the humankind from the beginning of the
civilization. From James Clerk Maxwell’s theory of
electromagnetism to Einstein’s General theory of
relativity, symmetry is found in the physical laws
including time symmetry that never breaks.
December, 2016
From the Chairman's Desk
It gives me immense pleasure to announce the
resumption of Semiconductor News, an e-newsletter
of Semiconductor Society (India). The executive
committee of SSI has decided to publish it out
quarterly.
